Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | CHANG Yi | en_US |
dc.contributor.author | LIN Yueh-Chin | en_US |
dc.contributor.author | WANG Huan-Chung | en_US |
dc.date.accessioned | 2014-12-16T06:14:43Z | - |
dc.date.available | 2014-12-16T06:14:43Z | - |
dc.date.issued | 2014-11-27 | en_US |
dc.identifier.govdoc | H01L029/778 | zh_TW |
dc.identifier.govdoc | H01L029/205 | zh_TW |
dc.identifier.govdoc | H01L029/20 | zh_TW |
dc.identifier.govdoc | H01L029/66 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/104859 | - |
dc.description.abstract | An enhanced GaN transistor is provided. The structure comprises a substrate, a heterostructure, a p-element epitaxy growth layer, a drain ohmic contact and a source ohmic contact disposed on the heterostructure and on two sides of the p-element epitaxy growth layer, a gate structure disposed on the p-element epitaxy growth layer, and is separated from the drain ohmic contact and the source ohmic contact, a surface passivation layer covered the drain ohmic contact, source ohmic contact, and p-element epitaxy growth layer, and covered portion of the gate structure. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | Enhanced GaN Transistor and the Forming Method Thereof | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 20140346523 | zh_TW |
Appears in Collections: | Patents |
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