METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LIU Po-Tsun	en_US
dc.contributor.author	TENG Li-Feng	en_US
dc.contributor.author	LO Yuan-Jou	en_US
dc.contributor.author	LEE Yao-Jen	en_US
dc.date.accessioned	2014-12-16T06:14:44Z	-
dc.date.available	2014-12-16T06:14:44Z	-
dc.date.issued	2014-09-25	en_US
dc.identifier.govdoc	H01L021/477	zh_TW
dc.identifier.govdoc	H01L029/66	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/104867	-
dc.description.abstract	A method for fabricating a semiconductor device is disclosed in the present invention. The abovementioned method comprises the following steps. Firstly, a gate is formed on a substrate. A gate insulating layer is then formed on the gate, and further an active layer is disposed on the gate insulating layer, wherein the active layer is composed of a microwave absorbing material. Source/drain is defined on the active layer to form the semiconductor device, and a microwave annealing process is finally performed thereon.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	METHOD FOR FABRICATING SEMICONDUCTOR DEVICE	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20140287561	zh_TW
顯示於類別：	專利資料

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