標題: Stacked Gate Structure, Metal-Oxide-Semiconductor Including the Same, and Method for Manufacturing the Stacked Gate Structure
作者: LIN Yueh-Chin
CHANG Edward Yi
CHUANG Ting-Wei
公開日期: 5-Jun-2014
摘要: The invention provides a stacked gate structure and metal-oxide-semiconductor including the same, and method for manufacturing the stacked gate structure. The stacked gate structure comprises a substrate, a semiconductor layer positioned on the substrate, a gate dielectric positioned on the semiconductor layer, and a gate electrode layer positioned on the gate dielectric, which the gate dielectric comprises a composite oxide layer composed of lanthanum oxide (La2O3) and hafnium oxide (HfO2).
官方說明文件#: H01L029/78
H01L021/28
URI: http://hdl.handle.net/11536/104912
專利國: USA
專利號碼: 20140151710
Appears in Collections:Patents


Files in This Item:

  1. 20140151710.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.