METHOD FOR GROWING EPITAXIAL DIAMOND

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHANG Li	en_US
dc.contributor.author	WU Ping-Hsun	en_US
dc.contributor.author	CHIU Kun-An	en_US
dc.date.accessioned	2014-12-16T06:14:48Z	-
dc.date.available	2014-12-16T06:14:48Z	-
dc.date.issued	2014-05-22	en_US
dc.identifier.govdoc	C30B025/18	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/104918	-
dc.description.abstract	A method for growing epitaxial diamond is provided here. A metallic layer is deposited on a diamond substrate and is followed by an epitaxial diamond film deposited on top of the metallic layer. As a buffer layer, the metallic layer relieves stress accumulated in the thin film of the epitaxial diamond to prevent cracks. In consequence, diamond epitaxial layers with desired thickness and good quality can be obtained.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	METHOD FOR GROWING EPITAXIAL DIAMOND	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20140137795	zh_TW
顯示於類別：	專利資料

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