METAL-GATE/HIGH-k/GE MOSFET WITH LASER ANNEALING AND FABRICATION METHOD THEREOF

標題:	METAL-GATE/HIGH-k/GE MOSFET WITH LASER ANNEALING AND FABRICATION METHOD THEREOF
作者:	CHIN ALBERT
公開日期:	7-二月-2013
摘要:	The present invention discloses a metal-gate/high-κ/Ge MOSFET with laser annealing and a fabrication method thereof. The fabrication method comprises the following steps: forming a substrate; implanting a source area and a drain area on the substrate; activating the source area and the drain area by first laser light; depositing gate dielectric material on the substrate; annealing high-κ dielectric material by second laser light; and forming a metal gate on the high-κ dielectric material.
官方說明文件#:	H01L029/78 H01L021/336
URI:	http://hdl.handle.net/11536/105080
專利國:	USA
專利號碼:	20130032898
顯示於類別：	專利資料

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