完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chiu Yi-Te | en_US |
dc.contributor.author | Chang Ming-Hung | en_US |
dc.contributor.author | Yang Hao-I | en_US |
dc.contributor.author | Hwang Wei | en_US |
dc.date.accessioned | 2014-12-16T06:15:06Z | - |
dc.date.available | 2014-12-16T06:15:06Z | - |
dc.date.issued | 2012-09-13 | en_US |
dc.identifier.govdoc | G11C011/00 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/105134 | - |
dc.description.abstract | A static random access memory cell includes a latch unit. The latch unit includes a bi-inverting circuit and a switching circuit. The bi-inverting circuit has a first terminal and a second terminal. The switching circuit is electrically connected between the first terminal and the second terminal, wherein when the switching circuit is turned on, the switching circuit forms a feedback between the first terminal and the second terminal for latching the latch unit; and when the switching circuit is turned off, the feedback is removed to cause the SRAM cell to write a data bit to the latch unit. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | STATIC RANDOM ACCESS MEMORY CELL AND METHOD OF OPERATING THE SAME | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 20120230086 | zh_TW |
顯示於類別: | 專利資料 |