CAPACITOR DEVICE AND METHOD FOR FORMING THE SAME

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DC 欄位	值	語言
dc.contributor.author	Chin Albert	en_US
dc.date.accessioned	2014-12-16T06:15:13Z	-
dc.date.available	2014-12-16T06:15:13Z	-
dc.date.issued	2012-05-10	en_US
dc.identifier.govdoc	H01G004/06	zh_TW
dc.identifier.govdoc	B23K026/00	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105185	-
dc.description.abstract	The present invention related to a method for forming a capacitor device, comprising steps of: providing a substrate, forming a first metal layer on the substrate, forming a dielectric on the first metal layer, applying a laser-annealing to the dielectric, and forming a second metal layer on the dielectric.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	CAPACITOR DEVICE AND METHOD FOR FORMING THE SAME	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20120113561	zh_TW
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