DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF

標題:	DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF
作者:	CHANG EDWARD YI HSU HENG-TUNG
公開日期:	26-Apr-2012
摘要:	A manufacturing method of a device having series-connected HEMTs is presented. Transistors are formed on a substrate and integratedly serial-connected as an integrated device by interconnection wires. Therefore, the voltage of the device is the sum of the voltages across each transistors so that the device can have high breakdown voltage.
官方說明文件#:	H01L029/778 H01L021/335
URI:	http://hdl.handle.net/11536/105192
專利國:	USA
專利號碼:	20120098037
Appears in Collections:	Patents

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.