Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | YANG Hao-I | en_US |
dc.contributor.author | Chuang Ching-Te | en_US |
dc.contributor.author | Hwang Wei | en_US |
dc.date.accessioned | 2014-12-16T06:15:14Z | - |
dc.date.available | 2014-12-16T06:15:14Z | - |
dc.date.issued | 2012-04-12 | en_US |
dc.identifier.govdoc | G11C005/14 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/105196 | - |
dc.description.abstract | The present invention proposes a gate oxide breakdown-withstanding power switch structure, which is connected with an SRAM and comprises a first CMOS switch and a second CMOS switch respectively having different gate-oxide thicknesses or different threshold voltages. The CMOS switch, which has a normal gate-oxide thickness or a normal threshold voltage, provides current for the SRAM to wake up the SRAM from a standby or sleep mode to an active mode. The CMOS switch, which has a thicker gate-oxide thickness or a higher threshold voltage, provides current for the SRAM to work in an active mode. The present invention prevents a power switch from gate-oxide breakdown lest noise margin, stabilization and performance of SRAM be affected. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | GATE OXIDE BREAKDOWN-WITHSTANDING POWER SWITCH STRUCTURE | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 20120087196 | zh_TW |
Appears in Collections: | Patents |
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