標題: VERTICAL TRANSISTOR AND A METHOD OF FABRICATING THE SAME
作者: Meng Hsin-Fei
Zan Hsiao-Wen
Chao Yu-Chiang
公開日期: 24-十一月-2011
摘要: A vertical transistor and a method of fabricating the vertical transistor are provided. The vertical transistor has a substrate, a first electrode formed on the substrate, a first insulation layer formed on the first electrode, with a portion of the first electrode exposed from the first insulation layer and having a thickness greater than 50 nm and no more than 300 nm, a grid electrode formed on the first insulation layer, a semiconductor layer formed on the first electrode, and a second electrode formed on the semiconductor layer.
官方說明文件#: H01L029/78
H01L021/336
URI: http://hdl.handle.net/11536/105244
專利國: USA
專利號碼: 20110284949
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