標題: | Sub-wavelength structure layer, method for fabricating the same and photoelectric conversion device applying the same |
作者: | Chang Edward Yi Sahoo Kartika Chandra Lin Men-Ku Lu Yi-Yao Wang Sheng-Ping |
公開日期: | 23-六月-2011 |
摘要: | The present invention relates to a method for fabricating a sub-wavelength structure layer, including: forming a metal film on a passivation layer, an n-GaN layer or a transparent conductive oxide layer; performing thermal treatment to form self assembled metal nano particles; using the metal nano particles as a mask to remove a partial area of the passivation layer, the n-GaN layer or the transparent conductive oxide layer to form a sub-wavelength structure of which the cross-sectional area increases along the thickness direction of the passivation layer, the n-GaN layer or the transparent conductive oxide layer; and removing the metal nano particles. In addition, the present invention further provides the obtained sub-wavelength structure layer and a photoelectric conversion device using the same. |
官方說明文件#: | H01L031/0224 H01L031/18 H01L031/0352 |
URI: | http://hdl.handle.net/11536/105296 |
專利國: | USA |
專利號碼: | 20110146779 |
顯示於類別: | 專利資料 |