標題: Sub-wavelength structure layer, method for fabricating the same and photoelectric conversion device applying the same
作者: Chang Edward Yi
Sahoo Kartika Chandra
Lin Men-Ku
Lu Yi-Yao
Wang Sheng-Ping
公開日期: 23-Jun-2011
摘要: The present invention relates to a method for fabricating a sub-wavelength structure layer, including: forming a metal film on a passivation layer, an n-GaN layer or a transparent conductive oxide layer; performing thermal treatment to form self assembled metal nano particles; using the metal nano particles as a mask to remove a partial area of the passivation layer, the n-GaN layer or the transparent conductive oxide layer to form a sub-wavelength structure of which the cross-sectional area increases along the thickness direction of the passivation layer, the n-GaN layer or the transparent conductive oxide layer; and removing the metal nano particles. In addition, the present invention further provides the obtained sub-wavelength structure layer and a photoelectric conversion device using the same.
官方說明文件#: H01L031/0224
H01L031/18
H01L031/0352
URI: http://hdl.handle.net/11536/105296
專利國: USA
專利號碼: 20110146779
Appears in Collections:Patents


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