GaN HEMT with Nitrogen-Rich Tungsten Nitride Schottky Gate and Method of Forming the Same

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DC Field	Value	Language
dc.contributor.author	Chang, Edward Yi	en_US
dc.contributor.author	Lu, Chung-Yu	en_US
dc.date.accessioned	2014-12-16T06:15:27Z	-
dc.date.available	2014-12-16T06:15:27Z	-
dc.date.issued	2011-03-10	en_US
dc.identifier.govdoc	H01L029/20	zh_TW
dc.identifier.govdoc	H01L029/778	zh_TW
dc.identifier.govdoc	H01L021/335	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105329	-
dc.description.abstract	A GaN HEMT with Schottky gate is disclosed. The GaN HEMT sequentially has a GaN layer, an AlGaN layer, and a Schottky gate on a substrate, and a source and a drain on two sides of the Schottky gate. The Schottky gate is made by a material of nitrogen-rich tungsten nitride, which has a nitrogen content of about 0.5 molar ratio.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	GaN HEMT with Nitrogen-Rich Tungsten Nitride Schottky Gate and Method of Forming the Same	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20110057196	zh_TW
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