GaN HEMT with Nitrogen-Rich Tungsten Nitride Schottky Gate and Method of Forming the Same

Abstract

A GaN HEMT with Schottky gate is disclosed. The GaN HEMT sequentially has a GaN layer, an AlGaN layer, and a Schottky gate on a substrate, and a source and a drain on two sides of the Schottky gate. The Schottky gate is made by a material of nitrogen-rich tungsten nitride, which has a nitrogen content of about 0.5 molar ratio.