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dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorLu, Chung-Yuen_US
dc.date.accessioned2014-12-16T06:15:27Z-
dc.date.available2014-12-16T06:15:27Z-
dc.date.issued2011-03-10en_US
dc.identifier.govdocH01L029/20zh_TW
dc.identifier.govdocH01L029/778zh_TW
dc.identifier.govdocH01L021/335zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105329-
dc.description.abstractA GaN HEMT with Schottky gate is disclosed. The GaN HEMT sequentially has a GaN layer, an AlGaN layer, and a Schottky gate on a substrate, and a source and a drain on two sides of the Schottky gate. The Schottky gate is made by a material of nitrogen-rich tungsten nitride, which has a nitrogen content of about 0.5 molar ratio.zh_TW
dc.language.isozh_TWen_US
dc.titleGaN HEMT with Nitrogen-Rich Tungsten Nitride Schottky Gate and Method of Forming the Samezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20110057196zh_TW
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