| 標題: | MANUFACTURE METHOD OF MULTILAYER STRUCTURE HAVING NON-POLAR A-PLANE III-NITRIDE LAYER |
| 作者: | Lee, Wei-I Chen, Jenn-Fang Chiang, Chen-Hao |
| 公開日期: | 5-Aug-2010 |
| 摘要: | A manufacture method of a multilayer structure having a non-polar a-plane {11-22} III-nitride layer includes forming a nucleation layer on a r-plane substrate, wherein the nucleation layer is composed of multiple nitride layers; and forming a non-polar a-plane {11-20} III-nitride layer on the nucleation layer. The nucleation layer features reduced stress, reduced phase difference of lattice, blocked elongation of dislocation, and reduced density of dislocation. Thus, the non-polar a-plane {11-20} III-nitride layer with flat surface can be formed. |
| 官方說明文件#: | H01L029/205 H01L021/20 |
| URI: | http://hdl.handle.net/11536/105388 |
| 專利國: | USA |
| 專利號碼: | 20100193843 |
| Appears in Collections: | Patents |
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