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dc.contributor.authorLee, Wei-Ien_US
dc.contributor.authorChen, Jenn-Fangen_US
dc.contributor.authorChiang, Chen-Haoen_US
dc.date.accessioned2014-12-16T06:15:33Z-
dc.date.available2014-12-16T06:15:33Z-
dc.date.issued2010-08-05en_US
dc.identifier.govdocH01L029/205zh_TW
dc.identifier.govdocH01L021/20zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105388-
dc.description.abstractA manufacture method of a multilayer structure having a non-polar a-plane {11-22} III-nitride layer includes forming a nucleation layer on a r-plane substrate, wherein the nucleation layer is composed of multiple nitride layers; and forming a non-polar a-plane {11-20} III-nitride layer on the nucleation layer. The nucleation layer features reduced stress, reduced phase difference of lattice, blocked elongation of dislocation, and reduced density of dislocation. Thus, the non-polar a-plane {11-20} III-nitride layer with flat surface can be formed.zh_TW
dc.language.isozh_TWen_US
dc.titleMANUFACTURE METHOD OF MULTILAYER STRUCTURE HAVING NON-POLAR A-PLANE III-NITRIDE LAYERzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20100193843zh_TW
Appears in Collections:Patents


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