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dc.contributor.authorChang, Yi Edwarden_US
dc.contributor.authorChang, Chia-Taen_US
dc.contributor.authorHsiao, Shih-Kuangen_US
dc.date.accessioned2014-12-16T06:15:34Z-
dc.date.available2014-12-16T06:15:34Z-
dc.date.issued2010-06-24en_US
dc.identifier.govdocH01L021/3065zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105397-
dc.description.abstractThe invention is disclosed that pattern on semiconductor substrate is fabricated by thermal reflow technique. Also, the pattern on semiconductor substrate having different sub-micron spacings can be fabricated by using different time for the thermal reflow technique process.zh_TW
dc.language.isozh_TWen_US
dc.titleMethod for forming required pattern on semiconductor substrate by thermal reflow techniquezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20100159708zh_TW
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