標題: | Leakage current cut-off device for ternary content addressable memory |
作者: | Huang, Po-Tsang Liu, Wen-Yen Hwang, Wei |
公開日期: | 25-Jun-2009 |
摘要: | A leakage current cut-off device for a ternary content addressable memory is provided. The storage cell of a ternary content addressable memory may be in the active mode, data-retention mode and cut-off mode. This invention applies a multi-mode data retention power gating device to the storage cell of the ternary content addressable memory to reduce the leakage current through the storage cell in the data-retention mode and the cut-off mode, and support the full speed operation in the active mode. |
官方說明文件#: | G11C015/00 G11C005/14 |
URI: | http://hdl.handle.net/11536/105517 |
專利國: | USA |
專利號碼: | 20090161400 |
Appears in Collections: | Patents |
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