Structure of high power edge emission laser diode

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Chen, Chyong-Hua	en_US
dc.date.accessioned	2014-12-16T06:15:51Z	-
dc.date.available	2014-12-16T06:15:51Z	-
dc.date.issued	2009-01-15	en_US
dc.identifier.govdoc	H01S005/34	zh_TW
dc.identifier.govdoc	H01S005/343	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105552	-
dc.description.abstract	A structure of high power edge emission laser diode that has plural mode extension sublayers with a chirp periodic distribution is provided. The Near Field Pattern (NFP) is an L shape, and the high intensity portion is nicely overlapped with the multi quantum wells. Furthermore, the low intensity portion will extend to the n-type cladding as it can as possible. Accordingly, the optical power density on the mirror surface of the high power edge emission laser diode is lower down and the vertical divergence angle is decreased, so as to prolong its lifetime.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Structure of high power edge emission laser diode	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20090016396	zh_TW
顯示於類別：	專利資料

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