完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, Wei-Kuoen_US
dc.contributor.authorKe, Wen-Chengen_US
dc.date.accessioned2014-12-16T06:16:06Z-
dc.date.available2014-12-16T06:16:06Z-
dc.date.issued2007-05-17en_US
dc.identifier.govdocH01J001/62zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105657-
dc.description.abstractA structure of multi-wavelength light emitting device comprises multi-stacked active layer structure. Each stacked layer comprises lower energy bandgap well 4 and higher energy bandgap barrier layer 3 wherein at least one stacked layer in the device contains nanoparticles. As a result, the emitting wavelengths of the multi-stacked active layer structure consist parts (or all) of the emitting wavelengths come from the stack layers containing nanoparticles, and parts (or all) of the emitting wavelengths come from the stack layers not containing nanoparticles. In another embodiment, parts (or all) of the emitting wavelengths of the multi-stacked active layer structure can be also used to trigger one or more phosphorescences from the phosphors, thus the emitting wavelengths of such a phosphors converted light emitting device may come partially from the multi-stacked active layer itself and partially (or all) from the phosphors.zh_TW
dc.language.isozh_TWen_US
dc.titleNanoparticle structure and manufacturing process of multi-wavelength light emitting devicezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20070108888zh_TW
顯示於類別:專利資料


文件中的檔案:

  1. 20070108888.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。