標題: | Dislocation reduction in GaN grown on stripe patterned r-plane sapphire substrates |
作者: | Chen, Hou-Guang Ko, Tsung-Shine Ling, Shih-Chun Lu, Tien-Chang Kuo, Hao-Chung Wang, Shing-Chung Wu, Yue-Han Chang, Li 材料科學與工程學系 光電工程學系 Department of Materials Science and Engineering Department of Photonics |
公開日期: | 9-七月-2007 |
摘要: | Extended defect reduction in GaN can be achieved via direct growth on stripe patterned (1(-)1 02) r-plane sapphire substrates by metal organic chemical vapor deposition. The striped mesa is along [11 (-)2 0] with two etched sides in {0001} and {1 (-)1 01} faces. GaN grown on both etched facets in epitaxy exhibit different crystallographic relationships with sapphire substrate which are (1 (-)1 02)(sapphire)parallel to(11 (-)2 0)(GaN) and [11 (-)2 0](sapphire)parallel to[ (-)1 100](GaN), and (0001)(sapphire)parallel to(0001)(GaN) and [11 (-)2 0](sapphire)parallel to[ (-)1 100](GaN), respectively. The dislocation densities can be significantly reduced through epitaxial growth on the inclined lateral faces of mesas. Dislocation density in the order of similar to 10(7) cm(-2) can be achieved in the tilted GaN. (C) 2007 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2754643 http://hdl.handle.net/11536/10568 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.2754643 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 91 |
Issue: | 2 |
結束頁: | |
顯示於類別: | 期刊論文 |