1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorTsui, Bing-Yueen_US
dc.contributor.authorLin, Chia-Pinen_US
dc.date.accessioned2014-12-16T06:16:11Z-
dc.date.available2014-12-16T06:16:11Z-
dc.date.issued2006-11-16en_US
dc.identifier.govdocH01L021/8238zh_TW
dc.identifier.govdocH01L027/12zh_TW
dc.identifier.govdocH01L029/76zh_TW
dc.identifier.govdocH01L029/94zh_TW
dc.identifier.govdocH01L021/44zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105689-
dc.description.abstractThe present invention proposes a nano-scale high-performance SOI MOSFET device and a process for manufacturing the same. The device is characterized by comprising: a metal oxide semiconductor, formed on the SOI substrate; a silicide layer (05), wherein a gate consists of a single full silicide gate (10), a high-K dielectric layer (08) and a part for work function modification (09); and source/drain (6) are complete through a silicide reaction and has a modified Schottky junction.zh_TW
dc.language.isozh_TWen_US
dc.titleFully-depleted SOI MOSFET device and process for fabricating the samezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20060255405zh_TW
Appears in Collections:Patents


Files in This Item:

  1. 20060255405.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...