Fully-depleted SOI MOSFET device and process for fabricating the same

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Tsui, Bing-Yue	en_US
dc.contributor.author	Lin, Chia-Pin	en_US
dc.date.accessioned	2014-12-16T06:16:11Z	-
dc.date.available	2014-12-16T06:16:11Z	-
dc.date.issued	2006-11-16	en_US
dc.identifier.govdoc	H01L021/8238	zh_TW
dc.identifier.govdoc	H01L027/12	zh_TW
dc.identifier.govdoc	H01L029/76	zh_TW
dc.identifier.govdoc	H01L029/94	zh_TW
dc.identifier.govdoc	H01L021/44	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105689	-
dc.description.abstract	The present invention proposes a nano-scale high-performance SOI MOSFET device and a process for manufacturing the same. The device is characterized by comprising: a metal oxide semiconductor, formed on the SOI substrate; a silicide layer (05), wherein a gate consists of a single full silicide gate (10), a high-K dielectric layer (08) and a part for work function modification (09); and source/drain (6) are complete through a silicide reaction and has a modified Schottky junction.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Fully-depleted SOI MOSFET device and process for fabricating the same	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20060255405	zh_TW
顯示於類別：	專利資料

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。