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dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorHsu, Kuo-Chunen_US
dc.date.accessioned2014-12-16T06:16:17Z-
dc.date.available2014-12-16T06:16:17Z-
dc.date.issued2005-06-23en_US
dc.identifier.govdocH01L021/332zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105743-
dc.description.abstractA double-triggered silicon controller rectifier (SCR) comprises a plurality of N+ diffusion areas, a plurality of P+ diffusion areas, a first N-well region, a second N-well region and a third N-well region formed in a P-substrate. The N+ diffusion areas and the P+ diffusion areas are isolated by shallow trench isolation (STI) structures. Two of the N+ diffusion areas are N-type trigger terminals. Two of the P+ diffusion areas are the P-type trigger terminal.zh_TW
dc.language.isozh_TWen_US
dc.title[DOUBLE-TRIGGERED SILICON CONTROLLING RECTIFIER AND ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT THEREOF]zh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20050133869zh_TW
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