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dc.contributor.authorKow, Changen_US
dc.contributor.authorYuan, Chungen_US
dc.date.accessioned2014-12-16T06:16:19Z-
dc.date.available2014-12-16T06:16:19Z-
dc.date.issued2004-04-01en_US
dc.identifier.govdocH01L021/44zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105779-
dc.description.abstractA method of manufacturing a thin film transistor for solving the drawbacks of the prior art is disclosed. The method includes steps of providing an insulating substrate, sequentially forming a source/drain layer, a primary gate insulating layer, and a first conducting layer on the insulating substrate, etching the first conducting layer to form a primary gate; sequentially forming a secondary gate insulating layer and a second conducting layer on the primary gate; and etching the second conducting layer to form a first secondary gate and a second secondary gate.zh_TW
dc.language.isozh_TWen_US
dc.titleStructure of thin film transistor and manufacturing method thereofzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20040063311zh_TW
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