Full metadata record
DC FieldValueLanguage
dc.contributor.authorHsiung, Zi-Haoen_US
dc.contributor.authorWu, Hui-Ien_US
dc.contributor.authorJou, Christina F.en_US
dc.date.accessioned2014-12-08T15:13:41Z-
dc.date.available2014-12-08T15:13:41Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-0748-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/10589-
dc.description.abstractThis paper demonstrates a RF receiver front end circuit for multi-band orthogonal frequency division multiple access (MB-OFDM) using standard 0.18um complementery metal oxide semiconductor (CMOS) technology. The receiver front end includes a low-noise amplifier and a down conversion mixer. The proposed LNA uses transistor's intrinsic capacitor Cgd and only one inductor as input matching network to achieve wideband impedance matching. And the proposed mixer uses folded current reused architecture to decrease supply voltage and enhance conversion power gain effectively. This wideband front end circuit achieves 19-21.5 dB of power gain and 4-3-6.2 dB of double-sideband (DSB) noise figure from 3.1GHz to 8 GHz with IF=100 MHz. The simulated core current consumption was 13.1 mA from a 1.5 V supply, with a compact size of 1.16 mm(2).en_US
dc.language.isoen_USen_US
dc.subjectCMOSen_US
dc.subjectUltra wide-banden_US
dc.subjectmixeren_US
dc.subjectLNAen_US
dc.subjectMB-OFDMen_US
dc.subjectCMOSen_US
dc.subjectFolded Current Reuseden_US
dc.titleA 3-8 GHz RF Receiver Front-End for Multi-Band UWB Wireless Systemen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2007 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5en_US
dc.citation.spage2476en_US
dc.citation.epage2479en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000261353301238-
Appears in Collections:Conferences Paper