Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 趙如蘋 | en_US |
dc.contributor.author | 吳信穎 | en_US |
dc.date.accessioned | 2014-12-16T06:16:43Z | - |
dc.date.available | 2014-12-16T06:16:43Z | - |
dc.date.issued | 2012-01-21 | en_US |
dc.identifier.govdoc | G02F001/1337 | zh_TW |
dc.identifier.govdoc | C23C014/36 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/106037 | - |
dc.description.abstract | 一種磁性薄膜對液晶分子之水平及垂直配向方法,係利用一直流離子濺鍍裝置(Direct-current Ion Sputter)所生成之透明磁性薄膜,可提供液晶分子幾近垂直排列之狀態。而在經由傳統摩刷處理後之透明磁性薄膜,則可更進一步提供有預傾角之水平或垂直排列之狀態。因此,藉由控制該透明磁性薄膜之成膜條件可改變其磁特性,再由控制其摩刷條件可改變其對液晶之預傾角大小及配向模式,因而可增加其應用範圍。本發明不僅製程手續簡便,並且與傳統之直流或交流電漿源設備共用亦同樣具有高透光度、硬度及絕緣性等特性。除了可降低其成本外,該透明磁性薄膜本身具有之磁性,更無須額外之配向處理程序即可達到非接觸式(Non-contact)多重區域(Multi-domain)配向之效果。 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 磁性薄膜對液晶分子之水平及垂直配向方法 | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | TWN | zh_TW |
dc.citation.patentnumber | I356953 | zh_TW |
Appears in Collections: | Patents |
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