On the enhanced impact ionization in uniaxial strained p-MOSFETs

doi:10.1109/LED.2007.900297

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Su, Pin	en_US
dc.contributor.author	Kuo, Jack J. -Y.	en_US
dc.date.accessioned	2014-12-08T15:13:45Z	-
dc.date.available	2014-12-08T15:13:45Z	-
dc.date.issued	2007-07-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2007.900297	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10631	-
dc.description.abstract	This letter reports a new mechanism for the enhanced impact-ionization rate (I-sub/I-d) present in short-channel uniaxial strained p-MOSFETs. Through the pinch-off voltage (V-dsat), we have assessed the impact of strain on the maximum channel electric field. Due to the strain-enhanced mobility, V-dsat becomes lower, resulting in the observed V-g-dependent enhancement in I-sub/I-d. This mechanism needs to be considered when one-to-one comparisons of the hot-carrier effect between strained and unstrained devices are made.	en_US
dc.language.iso	en_US	en_US
dc.subject	hot-carrier effect	en_US
dc.subject	impact ionization	en_US
dc.subject	strained-silicon	en_US
dc.subject	substrate current	en_US
dc.title	On the enhanced impact ionization in uniaxial strained p-MOSFETs	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2007.900297	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	28	en_US
dc.citation.issue	7	en_US
dc.citation.spage	649	en_US
dc.citation.epage	651	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000247643900036	-
dc.citation.woscount	15	-
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