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dc.contributor.authorWei, Hung-Juen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorChang, Yuwenen_US
dc.contributor.authorLin, Yi-Chenen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2014-12-08T15:13:45Z-
dc.date.available2014-12-08T15:13:45Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-0748-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/10633-
dc.description.abstractThis paper demonstrates the Divide-by4/5 prescalers with merged AND gates in 2 mu m GaInP/GaAs heterojunction bipolar transistor (HBT) and 035 mu m SiGe HBT technologies. By biasing the HBT near the peak transit-time frequency (f(tau)), the maximum operating frequency of a D-type flip-flop (D-FF) can be promoted. At the supply voltage of 5 V, the GaInP/GaAs prescaler operates from 30 MHz to 5.2 GHz, and the SiGe prescaler has the higher-speed performance of 1 GHz similar to 8 GHz at the cost of power consumption.en_US
dc.language.isoen_USen_US
dc.subjectGaInP/GaAs HBTen_US
dc.subjectSiGe HBTen_US
dc.subjectDual-Modulusen_US
dc.subjectDivide-by4/5en_US
dc.subjectPrescaleren_US
dc.subjectEmitter Couple Logic (ECL)en_US
dc.titleA High-Speed HBT Prescaler Based on the Divide-by-Two Topologyen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2007 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5en_US
dc.citation.spage755en_US
dc.citation.epage758en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000261353300193-
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