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dc.contributor.author崔秉鉞en_US
dc.contributor.author林家彬en_US
dc.date.accessioned2014-12-16T06:17:17Z-
dc.date.available2014-12-16T06:17:17Z-
dc.date.issued2006-01-21en_US
dc.identifier.govdocH01L029/772zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/106344-
dc.description.abstract本發明提出一種奈米尺寸之高性能絕緣層上矽晶金氧半場效電晶體裝置及其製法,其特徵在於裝置包括:一金屬氧化物半導體形成於絕緣層上矽晶基板之上;一金屬矽化物層,在閘極方面具有單一之全金屬矽化物閘極、高介電常數介電層以及可調變功函數之部件;在源、汲極部分則具有除了完全反應之金屬矽化物之源、汲極外,以及修正蕭基接面之源極與汲極結構。zh_TW
dc.language.isozh_TWen_US
dc.title全空乏型絕緣層上矽晶金氧半場效電晶體裝置及其製法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI248211zh_TW
Appears in Collections:Patents


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