標題: Fabrication and characteristics of thin-film InGaN-GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectors
作者: Chiu, C. H.
Kuo, H. C.
Lee, C. E.
Lin, C. H.
Cheng, P. C.
Huang, H. W.
Lu, T. C.
Wang, S. C.
Leung, K. M.
光電工程學系
Department of Photonics
公開日期: 1-Jul-2007
摘要: In this paper, a novel GaN-based thin-film vertical injection light-emitting diode (LED) structure with a TiO2 and SiO2 omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. The designed ODR, consisting of alternating TiO2 and SiO2, layers possesses a complete photonic band gap within the blue region of interest. The arrays of the conducting channels are integrated into the TiO2/SiO2 ODR structure for vertically spreading the current. Assisted by the laser lift-off and photo-enhanced chemically etched surface roughening process, the light output power and the external quantum efficiency of our thin-film LED with a TiO2/SiO2 ODR (at a driving current of 350 mA and with chip size of 1 mm x 1 mm) reached 330 mW and 26.7%, increased by 18% and 16%, respectively, compared with the results from the thin-film LED with an Al mirror. By examining the radiation patterns of the LEDs, the optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO2/SiO2 ODR within the blue regime.
URI: http://dx.doi.org/10.1088/0268-1242/22/7/029
http://hdl.handle.net/11536/10637
ISSN: 0268-1242
DOI: 10.1088/0268-1242/22/7/029
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 22
Issue: 7
起始頁: 831
結束頁: 835
Appears in Collections:Articles


Files in This Item:

  1. 000247401000029.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.