Ultraviolet Lasing Characteristics of a GaN Photonic Crystal Defect Emitter

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lai, Chun-Feng	en_US
dc.contributor.author	Yu, Peichen	en_US
dc.contributor.author	Wang, Te-Chung	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.contributor.author	Lee, Chao-Kuei	en_US
dc.date.accessioned	2014-12-08T15:13:47Z	-
dc.date.available	2014-12-08T15:13:47Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-1-4244-3590-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10655	-
dc.description.abstract	The fabricated GaN photonic crystal defect emitter demonstrated multimode lasing with a low optical pumping threshold of pulse engergy similar to 0.15 mu J. The device exhibited high spectral purity and enhanced spontaneous emission factor, beta similar to 0.045. (C) 2006 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Ultraviolet Lasing Characteristics of a GaN Photonic Crystal Defect Emitter	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5	en_US
dc.citation.spage	1063	en_US
dc.citation.epage	1064	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000268751000534	-
顯示於類別：	會議論文