Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature

doi:10.1063/1.2752737

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DC Field	Value	Language
dc.contributor.author	Lin, S. D.	en_US
dc.contributor.author	Ilchenko, V. V.	en_US
dc.contributor.author	Marin, V. V.	en_US
dc.contributor.author	Shkil, N. V.	en_US
dc.contributor.author	Buyanin, A. A.	en_US
dc.contributor.author	Panarin, K. Y.	en_US
dc.contributor.author	Tretyak, O. V.	en_US
dc.date.accessioned	2014-12-08T15:13:49Z	-
dc.date.available	2014-12-08T15:13:49Z	-
dc.date.issued	2007-06-25	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2752737	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10670	-
dc.description.abstract	The negative differential capacitance (NDC) of Schottky diodes with the layers of InAs quantum dots (QDs) has been clearly observed near room temperature. A simple model involving two zero-dimensional quantum states is proposed to explain the NDC behavior. The simulation results show that the NDC is caused by the fast charging-discharging process in the second states of QDs.	en_US
dc.language.iso	en_US	en_US
dc.title	Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2752737	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	90	en_US
dc.citation.issue	26	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000247625500079	-
dc.citation.woscount	9	-
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