標題: | AlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laser |
作者: | Huang, S. C. Liu, S. C. Li, A. Su, K. W. Chen, Y. F. Huang, K. F. 電子物理學系 Department of Electrophysics |
公開日期: | 1-六月-2007 |
摘要: | We demonstrate what is believed to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber in the Q switching of a high-power diode-pumped Nd-doped 1.06 mu m laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave to avoid damage. With an incident pump power of 13.5 W, an average output power of 3.5 W with a Q-switched pulse width of 0.9 ns at a pulse repetition rate of 110 kHz was obtained. (c) 2007 Optical Society of America. |
URI: | http://dx.doi.org/10.1364/OL.32.001480 http://hdl.handle.net/11536/10735 |
ISSN: | 0146-9592 |
DOI: | 10.1364/OL.32.001480 |
期刊: | OPTICS LETTERS |
Volume: | 32 |
Issue: | 11 |
起始頁: | 1480 |
結束頁: | 1482 |
顯示於類別: | 期刊論文 |