Optical and mechanical properties of reactively sputtered silicon dioxide films

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DC Field	Value	Language
dc.contributor.author	Wu, WF	en_US
dc.contributor.author	Chiou, BS	en_US
dc.date.accessioned	2014-12-08T15:02:24Z	-
dc.date.available	2014-12-08T15:02:24Z	-
dc.date.issued	1996-09-01	en_US
dc.identifier.issn	0268-1242	en_US
dc.identifier.uri	http://dx.doi.org/10.1088/0268-1242/11/9/012	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1078	-
dc.description.abstract	The reactive sputtering method, using an Ar/O-2 mixture, was applied to deposit silicon dioxide film. Both x-ray photoemission spectroscopy (XPS) and infrared absorption spectroscopy were employed to evaluate the structure of SiO2 films sputtered at various oxygen percentages. The optical and mechanical properties of SiO2 films on glass substrates were investigated. Films prepared at a higher oxygen content have a higher density and a higher refractive index.	en_US
dc.language.iso	en_US	en_US
dc.title	Optical and mechanical properties of reactively sputtered silicon dioxide films	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1088/0268-1242/11/9/012	en_US
dc.identifier.journal	SEMICONDUCTOR SCIENCE AND TECHNOLOGY	en_US
dc.citation.volume	11	en_US
dc.citation.issue	9	en_US
dc.citation.spage	1317	en_US
dc.citation.epage	1321	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1996VH30100012	-
dc.citation.woscount	16	-
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