Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

標題:	Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor
作者:	Wang, M. C. Chang, T. C. Liu, Po-Tsun Tsao, S. W. Chen, J. R. 光電工程學系顯示科技研究所 Department of Photonics Institute of Display
公開日期:	7-五月-2007
摘要:	The photo-leakage-current (I-PLC) characteristic of F incorporated a-Si:H thin film transistor (TFT) has been studied. The device activation energy (E-a) of a-Si:H(:F) TFTs is higher than those of typical a-Si:H TFTs, and resulted in the shift down of Fermi level in a-Si:H(:F). Experimental results show that the I-PLC of a-Si:H(:F) TFTs is smaller than that of conventional a-Si:H TFTs in the density of states limited region, stemmed from the higher recombination centers present in a-Si:H(:F) material. However, the higher I-PLC is observed in the hole conduction region, resulted from the larger E-a in the a-Si:H(:F) TFTs. (C) 2007 American Institute of Physics.
URI:	http://dx.doi.org/10.1063/1.2738192 http://hdl.handle.net/11536/10807
ISSN:	0003-6951
DOI:	10.1063/1.2738192
期刊:	APPLIED PHYSICS LETTERS
Volume:	90
Issue:	19
結束頁:
顯示於類別：	期刊論文

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