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dc.contributor.authorWang, Sheng-Chunen_US
dc.contributor.authorSu, Pinen_US
dc.contributor.authorChen, Kun-Mingen_US
dc.contributor.authorLin, Chien-Tingen_US
dc.contributor.authorLiang, Victoren_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2014-12-08T15:14:12Z-
dc.date.available2014-12-08T15:14:12Z-
dc.date.issued2007-05-01en_US
dc.identifier.issn1531-1309en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LMWC.2007.895713en_US
dc.identifier.urihttp://hdl.handle.net/11536/10872-
dc.description.abstractWe have investigated the radio frequency (RF) extrinsic resistance extraction for partially-depleted (PD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). Although the thick buried oxide in SOI devices can block the substrate coupling, the SOI neutral-body coupling effect is significant for RF applications. An equivalent circuit considering this effect has been proposed. Based on this equivalent circuit, a new model capturing the frequency dependence of extrinsic resistances has been derived. After considering the impact of quasi-neutral body, we have developed a physically accurate RF extrinsic resistance extraction methodology for PD SOI MOSFETs.en_US
dc.language.isoen_USen_US
dc.subjectmetal-oxide-semiconductor field effect transistors (MOSFETs)en_US
dc.subjectradio frequency (RF)en_US
dc.subjectresistance extractionen_US
dc.subjectsilicon-on-insulator (SOI) technologyen_US
dc.titleOn the RF extrinsic resistance extraction for partially-depleted SOI MOSFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LMWC.2007.895713en_US
dc.identifier.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERSen_US
dc.citation.volume17en_US
dc.citation.issue5en_US
dc.citation.spage364en_US
dc.citation.epage366en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000246378400018-
dc.citation.woscount7-
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