標題: Pressure-dependent Raman scattering and photoluminescence of Zn1-xCdxSe epilayers
作者: Lin, Y. C.
Chiu, C. H.
Fan, W. C.
Yang, S. L.
Chuu, D. S.
Chou, W. C.
電子物理學系
Department of Electrophysics
公開日期: 1-Apr-2007
摘要: Raman and photoluminescence spectra of cubic Zn1-xCdxSe (0 <= x <= 0.32) epilayers were obtained at high pressure. The impurity mode I observed in the phonon Raman spectra at low temperature confirms the intermediate phonon mode behavior. A split transverse optical phonon mode was found in the down-stroke high-pressure Raman scattering. Additionally, the pressure-dependent longitudinal optical (LO) phonon frequencies and the Gruneisen parameter (gamma(LO)) were obtained by quadratic polynomial fitting. Pressure-driven resonant Raman scattering effect was observed in samples with a high Cd concentration (x >= 0.18). The critical pressure of semiconductor-to-metal phase transition (Pt) decreases as the Cd content increases. As the Cd concentration increases from 0 to 0.32, Pt falls from 13.6 to 9.4 GPa, according to Pt (GPa)=13.6-6.8x-20.3x(2). (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2719287
http://hdl.handle.net/11536/10986
ISSN: 0021-8979
DOI: 10.1063/1.2719287
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 101
Issue: 7
結束頁: 
Appears in Collections:Articles


Files in This Item:

  1. 000245691000027.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.