標題: | Impact of channel dangling bonds on reliability characteristics of flash memory on poly-Si thin films |
作者: | Lin, Yu-Hsien Chien, Chao-Hsin Chou, Tung-Huan Chao, Tien-Sheng Lei, Tan-Fu 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | dangling bonds;flash memories;polycrystalline-silicon thin-film transistor (poly-Si-TFT);poly-Si-oxide-nitride-oxide-silicon (SONOS)-type memories |
公開日期: | 1-Apr-2007 |
摘要: | In this letter, we fabricated the poly-Si-oxide-nitride-oxide-silicon (SONOS)-type Flash memories on polycrystalline-silicon thin films and found that dangling bonds presented along the grain boundaries in the channel significantly influence their reliability characteristics in the aspects of charge storage, drain disturbance, and gate disturbance. Employing a powerful defect passivation technique, i.e., NH3 plasma treatment, the charge storage capability was clearly observed to be remarkably improved. Even so, the hydrogenated polycrystalline-silicon thin-film transistors (poly-Si-TFTs) still suffered from serious drain and gate disturbances, which exhibited behaviors that are quite specific and undoubtedly distinct from those observed in the conventional SONOS-type memories on single crystalline substrates. |
URI: | http://dx.doi.org/10.1109/LED.2007.891789 http://hdl.handle.net/11536/10994 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2007.891789 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 28 |
Issue: | 4 |
起始頁: | 267 |
結束頁: | 269 |
Appears in Collections: | Articles |
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