標題: | Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency |
作者: | Lee, Y. J. Lu, T. C. Kuo, H. C. Wang, S. C. Hsu, T. C. Hsieh, M. H. Jou, M. J. Lee, B. J. 光電工程學系 Department of Photonics |
關鍵字: | chemical wet etching;AlGaInP-based LEDs;nano-roughening |
公開日期: | 25-三月-2007 |
摘要: | A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H3PO4-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED. (c) 2006 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.mseb.2006.11.015 http://hdl.handle.net/11536/11013 |
ISSN: | 0921-5107 |
DOI: | 10.1016/j.mseb.2006.11.015 |
期刊: | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY |
Volume: | 138 |
Issue: | 2 |
起始頁: | 157 |
結束頁: | 160 |
顯示於類別: | 期刊論文 |