完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ko, T. S. | en_US |
dc.contributor.author | Wang, T. C. | en_US |
dc.contributor.author | Gao, R. C. | en_US |
dc.contributor.author | Chen, H. G. | en_US |
dc.contributor.author | Huang, G. S. | en_US |
dc.contributor.author | Lu, T. C. | en_US |
dc.contributor.author | Kuo, H. C. | en_US |
dc.contributor.author | Wang, S. C. | en_US |
dc.date.accessioned | 2014-12-08T15:14:29Z | - |
dc.date.available | 2014-12-08T15:14:29Z | - |
dc.date.issued | 2007-03-15 | en_US |
dc.identifier.issn | 0022-0248 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.jcrysgro.2006.12.046 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11025 | - |
dc.description.abstract | Non-polar a-plane (1 1 (2) over bar 0) GaN thin films were grown on r-plane (1 (1) over bar 0 2) sapphire substrates by metal-organic chemical vapor deposition. In order to obtain a-plane GaN films with better crystal quality and surface morphology, detailed comparisons between different growth conditions were investigated. The results showed that high-temperature and low-pressure conditions facilitating two-dimensional growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best mean roughness of the surface morphology was 10.5 angstrom. Various thickness values of AlN nucleation layers and the V/III ratios for growth of the a-plane GaN bulk were also studied to determine the best condition for obtaining a smooth surface morphology of the a-plane GaN layer. (c) 2007 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | X-ray diffraction | en_US |
dc.subject | metal-organic chemical vapor deposition | en_US |
dc.subject | nitrides | en_US |
dc.title | Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.jcrysgro.2006.12.046 | en_US |
dc.identifier.journal | JOURNAL OF CRYSTAL GROWTH | en_US |
dc.citation.volume | 300 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 308 | en_US |
dc.citation.epage | 313 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000245615600009 | - |
dc.citation.woscount | 41 | - |
顯示於類別: | 期刊論文 |