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dc.contributor.authorKo, T. S.en_US
dc.contributor.authorWang, T. C.en_US
dc.contributor.authorGao, R. C.en_US
dc.contributor.authorChen, H. G.en_US
dc.contributor.authorHuang, G. S.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.date.accessioned2014-12-08T15:14:29Z-
dc.date.available2014-12-08T15:14:29Z-
dc.date.issued2007-03-15en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2006.12.046en_US
dc.identifier.urihttp://hdl.handle.net/11536/11025-
dc.description.abstractNon-polar a-plane (1 1 (2) over bar 0) GaN thin films were grown on r-plane (1 (1) over bar 0 2) sapphire substrates by metal-organic chemical vapor deposition. In order to obtain a-plane GaN films with better crystal quality and surface morphology, detailed comparisons between different growth conditions were investigated. The results showed that high-temperature and low-pressure conditions facilitating two-dimensional growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best mean roughness of the surface morphology was 10.5 angstrom. Various thickness values of AlN nucleation layers and the V/III ratios for growth of the a-plane GaN bulk were also studied to determine the best condition for obtaining a smooth surface morphology of the a-plane GaN layer. (c) 2007 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectX-ray diffractionen_US
dc.subjectmetal-organic chemical vapor depositionen_US
dc.subjectnitridesen_US
dc.titleStudy on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2006.12.046en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume300en_US
dc.citation.issue2en_US
dc.citation.spage308en_US
dc.citation.epage313en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000245615600009-
dc.citation.woscount41-
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