標題: Systematical study of reliability issues in plasma-nitrided and thermally nitrided oxides for advanced dual-gate oxide p-channel metal-oxide-semiconductor field-effect transistors
作者: Lo, Wen-Cheng
Wu, Shien-Yang
Chang, Sun-Jay
Chiang, Mu-Chi
Lin, Chih-Yung
Chao, Tien-Sheng
Chang, Chun-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: NBTI;HCI;PNO;TNO;core;I/O
公開日期: 1-Mar-2007
摘要: In this study, we compared the effects of negative-bias temperature instability (NBTI) and hot-carrier injection (HCI) on the core and input/output (I/O) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) fabricated using the different gate dielectrics of plasma nitrided oxide (PNO) and thermally nitrided oxide (TNO). The mobility and constant overdrive current of the PMOSFETs fabricated using PNO as a gate oxide material are about 30 and 23% higher than those of the devices fabricated using TNO, respectively. The core PMOSFETs fabricated using PNO show a better NBTI and HCI immunity than those fabricated using TNO owing to the lower nitrogen concentration at the SiO2/Si-substrate interface. However, the I/O PMOSFETs fabricated using PNO show a higher HCI-induced degradation rate because of a higher oxide bulk trap density but a better NBTI than the devices fabricated using TNO at a normal stressed bias due to a low interface trap density.
URI: http://dx.doi.org/10.1143/JJAP.46.1124
http://hdl.handle.net/11536/11053
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.1124
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 46
Issue: 3A
起始頁: 1124
結束頁: 1128
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