標題: | High-temperature leakage improvement in metal-insulator-metal capacitors by work-function tuning |
作者: | Chiang, K. C. Cheng, C. H. Pan, H. C. Hsiao, N. Chou, C. P. Chin, Albert Hwang, H. L. 機械工程學系 電子工程學系及電子研究所 Department of Mechanical Engineering Department of Electronics Engineering and Institute of Electronics |
關鍵字: | capacitor;high temperature;metal-insulator-metal (MIM);Ni;thermal leakage |
公開日期: | 1-Mar-2007 |
摘要: | Using low-cost and high work-function Ni, a low leakage current of 5 x 10(-6) A/cm(2) at 125 degrees C is obtained in a high 25-fF/mu m(2)-density SrTiO3 metal-insulator-metal (MIM) capacitor processed at 400 degrees C. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall k value beyond previous laminate structure. |
URI: | http://dx.doi.org/10.1109/LED.2007.891265 http://hdl.handle.net/11536/11074 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2007.891265 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 28 |
Issue: | 3 |
起始頁: | 235 |
結束頁: | 237 |
Appears in Collections: | Articles |
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