完整后设资料纪录
DC 栏位 | 值 | 语言 |
---|---|---|
dc.contributor.author | Lu, Chia-Yu | en_US |
dc.contributor.author | Lin, Horng-Chih | en_US |
dc.contributor.author | Lee, Yao-Jen | en_US |
dc.contributor.author | Shie, Yu-Lin | en_US |
dc.contributor.author | Chao, Chih-Cheng | en_US |
dc.date.accessioned | 2014-12-08T15:14:38Z | - |
dc.date.available | 2014-12-08T15:14:38Z | - |
dc.date.issued | 2007-03-01 | en_US |
dc.identifier.issn | 1530-4388 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TDMR.2006.889268 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11100 | - |
dc.description.abstract | Im pacts of silicon nitride (SiN)-capping layer and the associated deposition process on the device characteristics and hot-electron degradation of nMOSFETs are investigated in this paper. The SiN layer used to induce channel strain for mobility enhancement was deposited by a low-pressure chemical vapor deposition. The deposition of the SiN aggravates threshold-voltage roll-off due to additional thermal budget and the strain effect. It is also found that the device hot-electron degradation is worse with the addition of the SiN capping. Furthermore, our results indicate that both the bandgap narrowing caused by the channel strain and the abundant hydrogen species from the precursors of SiN deposition contribute to the aggravated hot-electron effect. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | hot-electron effect | en_US |
dc.subject | low-pressure chemical vapor deposition (LPCVD) | en_US |
dc.subject | nMOSFET | en_US |
dc.subject | silicon nitride (SiN) capping | en_US |
dc.subject | tensile strain | en_US |
dc.title | Impacts of SiN-capping layer on the device characteristics and hot-carrier degradation of nMOSFETs | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TDMR.2006.889268 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | en_US |
dc.citation.volume | 7 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 175 | en_US |
dc.citation.epage | 180 | en_US |
dc.contributor.department | 电子工程学系及电子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000248067500021 | - |
dc.citation.woscount | 2 | - |
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