Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires

doi:10.1088/0957-4484/18/7/075403

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DC 欄位	值	語言
dc.contributor.author	Lin, Z. C.	en_US
dc.contributor.author	Hsieh, W. H.	en_US
dc.contributor.author	Lee, C. P.	en_US
dc.contributor.author	Suen, Y. W.	en_US
dc.date.accessioned	2014-12-08T15:14:39Z	-
dc.date.available	2014-12-08T15:14:39Z	-
dc.date.issued	2007-02-21	en_US
dc.identifier.issn	0957-4484	en_US
dc.identifier.uri	http://dx.doi.org/10.1088/0957-4484/18/7/075403	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11109	-
dc.description.abstract	Strong asymmetry of electron mobility in InGaAs/InAlAs heterostructures (lattice matched to InP) with the presence of InAs quantum wires was observed. Self-assembled InAs quantum wires, embedded in an InGaAs matrix close to the hetero-interface, has a strong effect in electron conduction in the interface channel. The low temperature mobility for electrons moving parallel to the quantum wires is much higher than that of electrons moving perpendicular to the wires. The asymmetry in mobility is attributed to the difference in scattering cross section of the quantum wires in these two directions.	en_US
dc.language.iso	en_US	en_US
dc.title	Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1088/0957-4484/18/7/075403	en_US
dc.identifier.journal	NANOTECHNOLOGY	en_US
dc.citation.volume	18	en_US
dc.citation.issue	7	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000243874200007	-
dc.citation.woscount	2	-
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