完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLai, Y. J.en_US
dc.contributor.authorYang, C. S.en_US
dc.contributor.authorChen, W. K.en_US
dc.contributor.authorLee, M. C.en_US
dc.contributor.authorChang, W. H.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorWang, J. S.en_US
dc.contributor.authorHuang, W. J.en_US
dc.contributor.authorJeng, Erik S.en_US
dc.date.accessioned2014-12-08T15:14:40Z-
dc.date.available2014-12-08T15:14:40Z-
dc.date.issued2007-02-19en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2696585en_US
dc.identifier.urihttp://hdl.handle.net/11536/11117-
dc.description.abstractThe ripening dynamics of CdSe quantum dots (QDs) partially capped with ZnSe layer are investigated. Atomic force microscopy (AFM) images show that the ripening of QDs is dramatically accelerated by depositing a ZnSe partial capping layer. The driving force of ripening enhancement is attributed to the increasing strain energy with capping thickness. For a ZnSe partial capping layer of below 3 ML, photoluminescence exhibits a clear redshift with increasing ZnSe monolayers. It is attributed to the size of the CdSe QD increases with ZnSe partial capping, in a manner that is consistent with the results of the AFM study. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleEffect of ZnSe partial capping on the ripening dynamics of CdSe quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2696585en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume90en_US
dc.citation.issue8en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000244420600082-
dc.citation.woscount1-
顯示於類別:期刊論文


文件中的檔案:

  1. 000244420600082.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。