完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lai, Y. J. | en_US |
dc.contributor.author | Yang, C. S. | en_US |
dc.contributor.author | Chen, W. K. | en_US |
dc.contributor.author | Lee, M. C. | en_US |
dc.contributor.author | Chang, W. H. | en_US |
dc.contributor.author | Chou, W. C. | en_US |
dc.contributor.author | Wang, J. S. | en_US |
dc.contributor.author | Huang, W. J. | en_US |
dc.contributor.author | Jeng, Erik S. | en_US |
dc.date.accessioned | 2014-12-08T15:14:40Z | - |
dc.date.available | 2014-12-08T15:14:40Z | - |
dc.date.issued | 2007-02-19 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2696585 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11117 | - |
dc.description.abstract | The ripening dynamics of CdSe quantum dots (QDs) partially capped with ZnSe layer are investigated. Atomic force microscopy (AFM) images show that the ripening of QDs is dramatically accelerated by depositing a ZnSe partial capping layer. The driving force of ripening enhancement is attributed to the increasing strain energy with capping thickness. For a ZnSe partial capping layer of below 3 ML, photoluminescence exhibits a clear redshift with increasing ZnSe monolayers. It is attributed to the size of the CdSe QD increases with ZnSe partial capping, in a manner that is consistent with the results of the AFM study. (c) 2007 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effect of ZnSe partial capping on the ripening dynamics of CdSe quantum dots | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2696585 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 90 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000244420600082 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |