标题: | GaN-based light-emitting diodes prepared on vicinal sapphire substrates |
作者: | Lin, J. C. Su, Y. K. Chang, S. J. Lan, W. H. Huang, K. C. Chen, W. R. Cheng, Y. C. Lin, W. J. 電子物理學系 Department of Electrophysics |
公开日期: | 1-二月-2007 |
摘要: | Thin InGaN epitaxial layers and GaN-based light-emitting diodes (LEDs) on conventional and vicinal cut sapphire substrates are prepared. It is found that indium atoms are distributed much more uniformly in the samples prepared on vicinal cut sapphire substrates. It is also found that stronger electroluminescence intensity can be achieved without the band-filling effect of localised states from the LEDs with vicinal cut sapphire substrate. With 20 mA current injection, it is found that 44% electroluminescence intensity enhancement can be achieved by using the 1 degrees tilted sapphire substrate. |
URI: | http://dx.doi.org/10.1049/iet-opt:20060031 http://hdl.handle.net/11536/11194 |
ISSN: | 1751-8768 |
DOI: | 10.1049/iet-opt:20060031 |
期刊: | IET OPTOELECTRONICS |
Volume: | 1 |
Issue: | 1 |
起始页: | 23 |
结束页: | 26 |
显示于类别: | Articles |
文件中的档案:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.