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dc.contributor.authorChen, Ming-Jeren_US
dc.contributor.authorYan, Shih-Gueien_US
dc.contributor.authorChen, Rong-Tingen_US
dc.contributor.authorHsieh, Chen-Yuen_US
dc.contributor.authorHuang, Pin-Weien_US
dc.contributor.authorChen, Han-Pingen_US
dc.date.accessioned2014-12-08T15:14:51Z-
dc.date.available2014-12-08T15:14:51Z-
dc.date.issued2007-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2006.889504en_US
dc.identifier.urihttp://hdl.handle.net/11536/11208-
dc.description.abstractThe MOSFET backscattering theory relies on a so-called "k(B)T" layer. In this letter, we adopt two different approaches to examine the temperature dependencies of the width spanned by this critical zone. First of all, a 55-nm channel length n-MOSFET is extensively characterized at three temperatures of 233 K, 263 K, and 298 K while undergoing a parameter decoupling/transformation process. A unique relationship is straightforwardly created and is comparable with that in the literature: The width of the "kBT" layer is proportional to the square root of temperature. The case of 77 K is also projected. Other corroborating evidence is a Monte Carlo particle simulation conducted on an 80-nm-long silicon conductor with the "kBT" layer's width proportional to the temperature in the high field region. Without adjusting any parameters, the backscattering theory is shown to work well for the demonstrated temperatures down to 77 K.en_US
dc.language.isoen_USen_US
dc.subjectbackscatteringen_US
dc.subjectMOSFETen_US
dc.subjectnanoscaleen_US
dc.subjectscatteringen_US
dc.titleTemperature-oriented experiment and simulation as corroborating evidence of MOSFET backscattering theoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2006.889504en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume28en_US
dc.citation.issue2en_US
dc.citation.spage177en_US
dc.citation.epage179en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000243915100030-
dc.citation.woscount5-
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