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dc.contributor.authorHuang, Hung-Wenen_US
dc.contributor.authorKao, Chih-Chiangen_US
dc.contributor.authorChu, Jung-Tangen_US
dc.contributor.authorWang, Wei-Chihen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorYu, Chang-Chinen_US
dc.contributor.authorKuo, Shou-Yien_US
dc.date.accessioned2014-12-08T15:14:52Z-
dc.date.available2014-12-08T15:14:52Z-
dc.date.issued2007-01-25en_US
dc.identifier.issn0921-5107en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mseb.2006.09.030en_US
dc.identifier.urihttp://hdl.handle.net/11536/11217-
dc.description.abstractThe InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface fabricated by using Ni nano-masks and laser etching methods were demonstrated and analyzed. The experiment results observed the maximum light output power of the InGaN/GaN LED with a nano-roughened top p-GaN surface etched with the laser energy of 300 mJ/cm(2) was 1.55 times higher than that of a conventional LED, and the wall-plug efficiency was enhanced 68% at 20 mA. The series resistance of InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectgallium nitride (GaN)en_US
dc.subjectlight emitting diode (LED)en_US
dc.subjectlaser etchingen_US
dc.titleInvestigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mseb.2006.09.030en_US
dc.identifier.journalMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGYen_US
dc.citation.volume136en_US
dc.citation.issue2-3en_US
dc.citation.spage182en_US
dc.citation.epage186en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000243843800015-
dc.citation.woscount10-
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